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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 250 μ A
100
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A,Referenced to 25 ° C
97
mV/ ° C
I DSS
Zero Gate Voltage Drain Current
V DS = 100 V,
V GS = 0 V
1
μ A
V DS = 100 V,V GS = 0 V T J = 125 ° C
60
μ A
V DS = 20 V,
V GS = 0 V
10
nA
I GSS
Gate–Body Leakage.
V GS = ± 20 V,
V DS = 0 V
± 50
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 1 mA
0.8
1.7
2
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 1 mA,Referenced to 25 ° C
–2.7
mV/ ° C
R DS(on)
Static Drain–Source
V GS = 10 V,
I D = 0.17 A
1.2
6
?
On–Resistance
V GS = 4.5 V, I D = 0.17 A
V GS = 10 V, I D = 0.17 A, T J = 125 ° C
1.3
2.2
10
12
I D(on)
On–State Drain Current
V GS = 10 V,
V DS = 5 V
0.68
A
g FS
Forward Transconductance
V DS = 10V,
I D = 0.17 A
0.08
0.8
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V,
f = 1.0 MHz
V GS = 0 V,
73
7
3.4
pF
pF
pF
R G
Gate Resistance
V GS = 15 mV, f = 1.0 MHz
2.2
?
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 30 V,
V GS = 10 V,
V DS = 30 V,
V GS = 10 V
I D = 0.28 A,
R GEN = 6 ?
I D = 0.22 A,
1.7
9
17
2.4
1.8
0.2
3.4
18
31
5
2.5
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
0.3
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Sourc e Diode Forward Current
0.17
A
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = 0.34 A (Note 2)
0.8
1.3
V
Voltage
t rr
Q rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I F = 0.17 A,
d iF /d t = 100 A/μs
11
3
nS
nC
NOTE:
1.
R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 350°C/W when mounted on a
minimum pad..
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
BSS123 Rev G(W)
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相关代理商/技术参数
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